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| ZXTD4591AM832 Datasheet, PDF (4/8 Pages) Zetex Semiconductors – COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR | |||
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ZXTD4591AM832
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
Output Capacitance
fT
Cobo
MIN.
40
40
5
300
300
200
35
150
TYP.
MAX. UNIT
V
CONDITIONS.
IC=100â®A
V IC=10mA*
V IE=100â®A
100
nA VCB=30V
100
nA VEB=4V
100
nA VCE=30V
300
mV IC=0.5A, IB=50mA*
500
mV IC=1A, IB=100mA*
1.1
V IC=1A, IB=100mA*
1.0
V IC=1A, VCE=5V*
IC=1mA, VCE=5V*
900
IC=0.5A, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
MHz IC=-50mA, VCE=-10V
f=100MHz
10
pF VCB=-10V, f=1MHz
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002
4
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