 English |
|
|
|
|
|
|
|
| ZXTS1000E6 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE | |||
| |||
| ◁ |
ZXTS1000E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
TRANSISTOR ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown
Voltage
V(BR)CBO -12
V
IC= -100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO -12
V
IC= -10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
300
Ratio
300
200
125
75
30
Transition Frequency
fT
-25
-55
-110
-160
-185
-990
-850
490
450
340
250
140
80
220
-10
-10
-10
-40
-100
-175
-215
-240
-1100
-1000
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
MHz
IE= -100µA
VCB=-10V
VEB=-4V
VCES=-10V
IC= -0.1A, IB= -10mA*
IC= -0.25A, IB=-10 mA*
IC= -0.5A, IB=-10 mA*
IC= -1A, IB= -50mA*
IC= -1.25A, IB= -100mA*
IC= -1.25A, IB= -100mA*
I=
C
-1.25A,
VCE=
2V*
IC= -10mA, VCE=-2V*
IC= -0.1A, VCE= -2V*
IC= -0.5A, VCE= -2V*
IC= -1.25A, VCE=-2V*
IC= -2A, VCE= -2V*
IC= -3A, VCE= -2V*
IC= -50mA, VCE=-10 V
f= 100MHz
Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
15
pF
VCB= -10V, f=1MHz
t(on)
t(off)
50
ns
VCC= -10V, IC=-1A
135
ns
IB1=IB2=-100mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Forward Voltage
V(BR)R 40
VF
Reverse Current
IR
Diode Capacitance
CD
Reverse Recovery Time
trr
*Measured under pulsed conditions.
60
V
IR=200µA
270
300
mV
IF=50mA*
300
350
mV
IF=100mA*
370
460
mV
IF=250mA*
425
550
mV
IF=500mA*
550
670
mV
IF=750mA*
640
780
mV
IF=1000mA*
810
1050 mV
IF=1500mA*
15
40
µA
VR=30V
20
pF
f=1MHz,VR=30V
10
ns
switched from
IF = 500mA to I R = 500mA
Measured at IR = 50mA
ISSUE 1 - NOVEMBER 2000
4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese