ZXTS1000E6 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE

ZXTS1000E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Schottky Diode
Continuous Reverse Voltage
Forward Current
Non Repetitive Forward Current t≤100µs
t≤ 10ms
Package
Power Dissipation at T_amb=25°C
single die “on”
both die “on”
Storage Temperature Range
Junction Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
V_R
I_F
I_FSM
P_D
T_stg
T_j
VALUE
-12
-12
-5
-1.25
40
0.5
6.75
3
0.725
0.885
-55 to +150
125
UNIT
V
V
V
A
V
A
A
A
W
W
°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
single die “on”
both die “on”
R_θJA
R_θJA
138
°C/W
113
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
ISSUE 1 - NOVEMBER 2000
2