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| ZXTP2009Z Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 | |||
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ZXTP2009Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BVCBO
BVCES
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
HFE
fT
-50 -90
V IC=-100â®A
-50 -90
V IC=-100â®A
-40 -58
V IC=-10mA*
-7.5 -8.3
V IE=-100â®A
Ͻ1 -20 nA VCB=-40V
Ͻ1 -20 nA VCB=-32V
Ͻ1 -20 nA VEB=-6V
-15 -30 mV IC=-0.1A, IB=-10mA*
-44 -60 mV IC=-1A, IB=-100mA*
-50 -70 mV IC=-1A, IB=-50mA*
-120 -165 mV IC=-1A, IB=-10mA*
-70 -80 mV IC=-2A, IB=-200mA*
-125 -175 mV IC=-2A, IB=-40mA*
-130 -175 mV IC=-3.5A, IB=-175mA*
-162 -185 mV IC=-5.5A, IB=-550mA*
-820 -900 mV IC=-2A, IB=-40mA*
-1000 -1075 mV IC=-5.5A, IB=-550mA*
-778 -850 mV IC=-2A, VCE=-2V*
-869 -950 mV IC=-5.5A, VCE=-2V*
200 390
IC=-10mA, VCE=-2V*
200 350 550
IC=-0.5A, VCE=-2V*
170 290
IC=-2A, VCE=-2V*
110 175
IC=-5.5A, VCE=-2V*
152
MHz IC=-50mA, VCE=-10V
f=100MHz
Output capacitance
Switching times
Switching times
COBO
td
tr
ts
tr
td
tr
ts
tr
53
pF VCB=-10V, f=1MHz*
18
ns IC=-1A, VCC=-10V,
17
IB1=IB2=-100mA
325
60
55
ns IC=-2A, VCC=-30V,
107
IB1=IB2=-20mA
264
103
* Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
SEMICONDUCTORS
4
ISSUE 1 - JUNE 2005
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