ZXTP2009Z Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

ZXTP2009Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current ^(b)
Peak pulse current
Power dissipation at T_A =25°C ^(a)
Linear derating factor
Power dissipation at T_A =25°C ^(b)
Linear derating factor
Power dissipation at T_A =25°C ^(c)
Linear derating factor
Power dissipation at T_A =25°C ^(d)
Linear derating factor
Operating and storage temperature range
SYMBOL
BV_CBO
BV_CBS
BV_CEO
BV_EBO
I_C
I_CM
P_D
P_D
P_D
P_D
T_j, T_stg
LIMIT
-50
-50
-40
-7.5
-5.5
-15
0.9
7.2
1.5
12
2.1
16.8
3
24
-55 to 150
UNIT
V
V
V
V
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient ^(a)
Junction to ambient ^(b)
Junction to ambient ^(c)
Junction to ambient ^(d)
SYMBOL
R_⍜JA
R_⍜JA
R_⍜JA
R_⍜JA
VALUE
139
83
60
42
UNIT
°C/W
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB measured at tϽ 5 secs.
SEMICONDUCTORS
2
ISSUE 1 - JUNE 2005