ZXTP03200BG Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 200V PNP Low VCE(sat) transistor

ZXTP03200BG
Electrical Characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-Base Breakdown BVCBO
Voltage
Collector-Emitter Breakdown BVCER
Voltage
Collector-Emitter Breakdown BVCEO
voltage
Emitter-Base Breakdown
Voltage
BV_EBO
Collector-Base Cut-off
Current
I_CBO
Min.
-220
-220
-200
-7
Typ.
-245
-245
-225
-8.4
<1
Max.
-50
-0.5
Unit Conditions
V I_C = -100μA
V I_C = -1µA, R_BE< 1kΩ
V IC = -10mA ^(*)
V I_E = -100μA
nA VCB= -200V
μA ^VCB^{= -200V,T}amb^=100˚C
Emitter Cut-off Current
Collector-Emitter Saturation
Voltage
I_EBO
V_CE(sat)
Base-Emitter Saturation
Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V_BE(sat)
V_BE(on)
h_FE
100
100
20
<1
-37
-130
-135
-180
-955
-860
195
170
50
5
-10
-50
-155
-160
-275
-1100
-1000
300
nA VEB= -6V
mV IC = -0.1A, IB = -10mA ^(*)
mV IC = -0.5A, IB = -25mA ^(*)
mV IC = -1A, IB = -100mA ^(*)
mV ^IC ^{= -2A, I}B ^{= -400mA (*)}
mV IC = -2A, IB = -400mA ^(*)
mV IC = -2A, VCE = -5V ^(*)
I_C = -10mA, V_CE = -5V ^(*)
I_C = -1A, V_CE = -5V ^(*)
I_C = -2A, V_CE = -5V ^(*)
I_C = -5A, V_CE = -5V ^(*)
Transition Frequency
Output Capacitance
f_T
C_obo
105
MHz IC = -100mA, VCE= -10V
f = 50MHz
31
pF VCB = -10V,f = 1MHz ^(*)
Delay Time
t_d
21
ns
Rise Time
t_r
Storage Time
t_s
18
ns
I_C = -1A, V_CC = -50V,
680
ns
I_B1 = -I_B2 = -100mA
Fall Time
t_f
75
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
Issue 1 - August 2008
4
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www.zetex.com
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