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ZXTP03200BG Datasheet, PDF (2/8 Pages) Zetex Semiconductors – 200V PNP Low VCE(sat) transistor
ZXTP03200BG
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (a)
Base Current
Peak Pulse Current
(a)
Power Dissipation at TA =25°C
Linear Derating Factor
Power Dissipation at TA =25°C (b)
Linear Derating Factor
(c)
Power Dissipation at TA =25°C
Linear Derating Factor
Power Dissipation at TA =25°C (d)
Linear Derating Factor
(e)
Power Dissipation at TC =25°C
Linear Derating Factor
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
ICM
PD
PD
PD
PD
PD
Tj, Tstg
Limit
-220
-200
-7
-2
-1
-5
1.25
10
1.65
13.2
3
24
5.8
46.5
11.9
95.2
-55 to 150
Unit
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal Resistance
Parameter
(a)
Junction to Ambient
Junction to Ambient (b)
Junction to Ambient (c)
(d)
Junction to Ambient
(e)
Junction to Lead
Symbol
RθJA
RθJA
RθJA
RθJA
RθJL
Value
100
76
41.6
21.5
10.5
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to Lead from Collector Tab.Typical
Issue 1 - August 2008
2
© Diodes Incorporated 2008
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