ZXTN25100DG Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 100V NPN high gain transistor

ZXTN25100DG
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-Base breakdown BV_CBO
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
BV_CEX
Collector-Emitter
breakdown voltage
BV_CEO
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_ECX
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_ECO
Emitter-Base breakdown BV_EBO
voltage
Collector-Base cut-off
current
I_CBO
Collector-Emitter cut-off I_CEX
current
Emitter-Base cut-off
current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Min.
180
180
100
6
6
7
Base-Emitter saturation
voltage
V_BE(sat)
Base-Emitter turn-on
voltage
V_BE(on)
Static forward current
h_FE
300
transfer ratio
120
40
Transition frequency
f_T
Typ.
220
220
130
8.2
8.7
8.3
<1
<1
120
80
215
200
1020
905
450
170
60
10
175
Max.
50
0.5
100
50
170
100
345
500
1100
1000
900
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
154 250
8.7
15
16.4
115
763
158
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Unit Conditions
V I_C = 100μA
V I_C = 100μA, R_BE < 1kΩ or
-1V < V_BC < 0.25V
V _{IC= 10mA} ^(*)
V I_E = 100μA, R_BC < 1kΩ or
0.25V > V_BC > -0.25V
V I_E = 100μA
V I_E = 100μA
nA V_CB =180V
μA V_CB =180V, T_amb=100°C
nA V_CE = 100V, R_BE < 1kΩ or
-1V < V_BE < 0.25V
nA V_EB = 5.6V
mV _{IC = 0.5A, IB = 10mA}^(*)
mV _{IC = 1A, IB = 100mA}^(*)
mV I_C = 2.5A, I_B = 250mA^(*)
mV I_C = 3A, I_B = 600mA^(*)
mV _{IC = 3A, IB = 600mA}^(*)
mV _{IC = 3A, VCE = 2V}^(*)
MHz
pF
pF
ns
ns
ns
ns
I_C = 10mA, V_CE = 2V^(*)
I_C = 0.5A, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
I_C = 3A, V_CE = 2V^(*)
I_C = 50mA, V_CE = 10V
f = 100MHz
V_EB = 0.5V, f = 1MHz^(*)
V_CB = 10V, f = 1MHz^(*)
I_C = 500mA, V_CC =10V,
I_B1 = -I_B2 = 50mA
Issue 1- December 2007
4
© Zetex Semiconductors plc 2007
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