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ZXTN25100DG Datasheet, PDF (2/8 Pages) Zetex Semiconductors – 100V NPN high gain transistor | |||
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ZXTN25100DG
Absolute maximum ratings
Parameter
Collector-Base voltage
Collector-Emitter voltage (forward blocking)
Collector-Emitter voltage
Emitter-Collector voltage (reverse blocking)
Emitter-Base voltage
Continuous Collector current(c)
Base current
Peak pulse current
Power dissipation at TA =25°C(a)
Linear derating factor
Power dissipation at TA =25°C(b)
Linear derating factor
Power dissipation at TA =25°C(c)
Linear derating factor
Power dissipation at TA =25°C(d)
Linear derating factor
Power dissipation at TC =25°C(e)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
IB
ICM
PD
PD
PD
PD
PD
Tj, Tstg
Limit
180
180
100
6
7
3
1
3.5
1.2
9.6
1.6
12.8
3
24
5.3
42
7.3
58
-55 to 150
Unit
V
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Junction to case(e)
Symbol
RâJA
RâJA
RâJA
RâJA
RâJC
Limit
104
78
42
23.5
16
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mmounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical
Issue 1- December 2007
2
© Zetex Semiconductors plc 2007
www.zetex.com
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