ZXTN25012EFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 12V, SOT23, NPN medium power transistor

ZXTN25012EFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Symbol
BV_CBO
BV_CEO
BV_EBO
BV_ECX
Min.
20
12
7
6
Emitter-collector breakdown BV_ECO 4.5
voltage (base open)
Collector-base cut-off current I_CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current
transfer ratio
h_FE
500
500
300
40
Transition frequency
f_T
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_OBO
t_d
t_r
t_s
t_f
Typ.
40
17
8.3
8.0
5.5
<1
<1
28
45
60
160
920
800
800
750
460
55
260
25.6
70.9
69.8
233
71.6
Max. Unit Conditions
V I_C = 100␮A
V _{IC = 10mA} ^(*)
V I_E = 100␮A
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100␮A,
50
20
50
32
55
75
190
1000
nA V_CB = 16V
␮A _{VCB = 16V, Tamb= 100°C}
nA V_EB = 5.6V
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 10mA}^(*)
mV _{IC = 2A, IB = 40mA}^(*)
mV _{IC = 6A, IB = 120mA}^(*)
mV _{IC = 6A, IB = 120mA}^(*)
900
1500
mV _{IC = 6A, VCE = 2V}^(*)
I_C = 10mA, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
I_C = 4A, V_CE = 2V^(*)
I_C = 15A, V_CE = 2V^(*)
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
35 pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V.
ns ^IC ^{= 1A,}
ns ^{IB1 = IB2= 10mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - June 2006
4
© Zetex Semiconductors plc 2006
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