ZXTN25012EFH Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 12V, SOT23, NPN medium power transistor

ZXTN25012EFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current^(c)
Base current
Peak pulse current
Power dissipation at T_amb =25°C^(a)
Linear derating factor
Power dissipation at T_amb =25°C^(b)
Linear derating factor
Power dissipation at T_amb =25°C^(c)
Linear derating factor
Power dissipation at T_amb =25°C^(d)
Linear derating factor
Operating and storage temperature range
Symbol
V_CBO
V_CEO
V_ECO
V_EBO
I_C
I_B
I_CM
P_D
Limit
20
12
4.5
7
6
1
15
0.73
5.84
Unit
V
V
V
V
A
A
A
W
mW/°C
P_D
1.05
W
8.4
mW/°C
P_D
1.25
W
9.6
mW/°C
P_D
1.81
W
14.5
mW/°C
T_j, T_stg - 55 to 150
°C
Thermal resistance
Parameter
Junction to ambient^(a)
Junction to ambient^(b)
Junction to ambient^(c)
Junction to ambient^(d)
Symbol
R_⍜JA
R_⍜JA
R_⍜JA
R_⍜JA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - June 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com