ZXTN2011Z Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

ZXTN2011Z
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector base breakdown voltage
Collector emitter breakdown voltage
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
BV_CBO
BV_CER
BV_CEO
BV_EBO
I_CBO
I_CER
RՅ1k⍀
I_EBO
V_CE(SAT)
Base emitter saturation voltage
Base emitter turn on voltage
Static forward current transfer ratio
V_BE(SAT)
V_BE(ON)
h_FE
Transition frequency
f_T
200 235
V I_C = 100␮A
200 235
V I_C = 1␮A, RB Յ 1k⍀
100 115
V I_C = 10mA*
7
8.1
V I_E = 100␮A
50 nA V_CB = 150V
0.5 ␮A V_CB = 150V, T_amb=100ЊC
100 nA V_CB = 150V
0.5 ␮A V_CB = 150V, T_amb=100ЊC
10
nA V_EB = 6V
20
30 mV I_C = 0.1A, I_B= 5mA*
45
60 mV I_C = 1A, I_B = 100mA*
85 115 mV I_C = 2A, I_B = 100mA*
155 195 mV I_C = 5A, I_B = 500mA*
1000 1100 mV I_C = 5A, I_B = 500mA*
900 1000 mV I_C = 5A, V_CE = 2V*
100 230
I_C = 10mA, V_CE = 2V*
100 200 300
I_C = 2A, V_CE = 2V*
30
60
I_C = 5A, V_CE = 2V*
10
20
I_C = 10A, V_CE = 2V*
130
MHz I_C = 100mA, V_CE = 10V
f=50MHz
Output capacitance
Switching times
C_OBO
t_ON
t_OFF
26
41
1010
pF V_CB = 10V, f= 1MHz*
ns I_C = 1A, V_CC = 10V,
I_B1 = I_B2 = 100mA
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
SEMICONDUCTORS
4
ISSUE 2 - MAY 2006