ZXTN2011Z Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

ZXTN2011Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Continuous collector current^(a)
Peak pulse current
Power dissipation at T_A=25°C ^(a)
Linear derating factor
Power dissipation at TA=25°C ^(b)
Linear derating factor
Operating and storage temperature range
SYMBOL
BV_CBO
BV_CEO
BV_EBO
I_C
I_CM
P_D
PD
T_j, T_stg
LIMIT
200
100
7
4.5
10
1.5
12
2.1
16.8
-55 to +150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient^(a)
Junction to ambient^(b)
SYMBOL
R_␪JA
R_␪JA
LIMIT
83
60
UNIT
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
SEMICONDUCTORS
2
ISSUE 2 - MAY 2006