ZXTN19060CFF Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 60V, SOT23F, NPN high gain power transistor

ZXTN19060CFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BV_CBO 160 200
V IC = 100␮A
Collector-emitter breakdown
voltage (forward blocking)
BV_CEX 160 200
V I_C = 100␮A, R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
Collector-emitter breakdown
voltage (base open)
BV_CEO
60 75
V _{IC = 10mA} ^(*)
Emitter-base breakdown voltage BV_EBO
7 8.3
V I_E = 100␮A
Emitter-collector breakdown
BV_ECX
6
7
voltage (reverse blocking)
V I_E = 100mA, R_BC Յ1k⍀ or
0.25V > V_BC > -0.25V
Emitter-collector breakdown
BV_ECO
6
7
voltage (base open)
V I_E = 100␮A,
Collector-base cut-off current I_CBO
<1 50 nA V_CB = 120V
20 ␮A V_CB = 120V, T_amb= 100°C
Collector-emitter cut-off current I_CEX
<1 100 nA V_CE = 120V, R_BE Յ1k⍀ or
-1V < V_BE < 0.25V
Emitter-base cut-off current
I_EBO
<1 50 nA V_EB = 5.6V
Collector-emitter saturation
voltage
V_CE(sat)
36 45 mV _{IC = 1A, IB = 100mA}^(*)
105 150 mV _{IC = 1A, IB = 10mA}^(*)
105 135 mV _{IC = 2A, IB = 40mA}^(*)
145 175 mV _{IC = 5.5A, IB = 550mA}^(*)
Base-emitter saturation voltage V_BE(sat)
1000 1100 mV _{IC = 5.5A, IB = 550mA}^(*)
Base-emitter turn-on voltage V_BE(on)
880 1000 mV _{IC = 5.5A, VCE = 2V}^(*)
Static forward current transfer h_FE
ratio
200 350 500
160 280
I_C = 0.1A, V_CE = 2V^(*)
I_C = 2A, V_CE = 2V^(*)
30 50
I_C = 6A, V_CE = 2V^(*)
Transition frequency
f_T
130
MHz I_C = 50mA, V_CE = 10V
f = 50MHz
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
310
19.3 25
27.3
13.2
682
90.9
pF _{VEB = 0.5V, f = 1MHz}^(*)
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V.
ns ^{IC = 500mA,}
ns ^{IB1 = IB2= 50mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - October 2006
4
© Zetex Semiconductors plc 2006
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