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ZXTN19060CFF Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 60V, SOT23F, NPN high gain power transistor
ZXTN19060CFF
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current (c)
Base current
Peak pulse current
Power dissipation @ Tamb =25°C (a)
Linear derating factor
Power dissipation @ Tamb =25°C (b)
Linear derating factor
Power dissipation @ Tamb =25°C (c)
Linear derating factor
Power dissipation @ Tamb =25°C (d)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
IB
ICM
PD
PD
PD
PD
Tj, Tstg
Limit
160
160
60
6
7
5.5
1
12
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
- 55 to 150
Unit
V
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Symbol
R⍜JA
R⍜JA
R⍜JA
R⍜JA
Limit
149.3
93.4
83.3
60
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - October 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com