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| ZXTDA1M832 Datasheet, PDF (4/8 Pages) Zetex Semiconductors – DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION | |||
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ZXTDA1M832
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
fT
Cobo
t(on)
t(off)
MIN.
40
15
7.5
200
300
200
150
80
TYP.
70
MAX. UNIT
V
CONDITIONS.
IC=100â®A
18
V IC=10mA*
8.2
8
70
165
240
0.94
0.88
415
450
320
240
80
120
30
120
160
25
25
25
14
100
200
280
1.00
0.95
40
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
IE=100â®A
VCB=32V
VEB=6V
VCE=12V
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA
IC=4.5A, IB=50mA
IC=4.5A, IB=50mA*
IC=4.5A, VCE=2V*
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
IC=-50mA, VCE=-10V
f=100MHz
VCB=-10V, f=1MHz
VCC=-6V, IC=-1A
IB1=IB2=-10mA
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002
4
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