ZXTDA1M832 Datasheet, PDF (2/8 Pages) Zetex Semiconductors – DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION

ZXTDA1M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (a)(f)
Continuous Collector Current (b)(f)
Base Current
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
Storage Temperature Range
Junction Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_C
I_B
P_D
P_D
P_D
P_D
P_D
P_D
T_stg
T_j
NPN
PNP
40
-20
15
-12
7.5
-7.5
15
-12
4.5
-4
5
-4.4
1000
1.5
12
2.45
19.6
1
8
1.13
8
1.7
13.6
3
24
-55 to +150
150
UNIT
V
V
V
A
A
A
mA
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(f)
R_θJA
83.3
°C/W
Junction to Ambient (b)(f)
R_θJA
51
°C/W
Junction to Ambient (c)(f)
R_θJA
125
°C/W
Junction to Ambient (d)(f)
R_θJA
111
°C/W
Junction to Ambient (d)(g)
R_θJA
73.5
°C/W
Junction to Ambient (e)(g)
R_θJA
41.7
°C/W
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
ISSUE 1 - JUNE 2002
2