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| ZXTD6717E6 Datasheet, PDF (4/7 Pages) Zetex Semiconductors – COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS | |||
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ZXTD6717E6
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -12
V
IC=-100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO -12
V
IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
300
Ratio
300
200
125
75
30
Transition Frequency
fT
-25
-55
-110
-160
-185
-0.99
-0.85
490
450
340
250
140
80
220
-10
-10
-10
-40
-100
-175
-215
-240
-1.10
-1.0
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
IE=-100â®A
VCB=-10V
VEB=-4V
VCES=-10V
IC=-100mA, IB=-10mA*
IC=-250mA, IB=-10mA*
IC=-500mA, IB=-10mA*
IC=-1A, IB=-50mA*
IC=-1.25A, IB=-100mA*
IC=-1.25A, IB=-100mA*
IC=-1.25A, VCE=-2V*
IC=-10mA, VCE=-2V*
IC=-100mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-1.25A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-3A, VCE=-2V*
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
15
Turn-On Time
Turn-Off Time
t(on)
t(off)
50
135
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=-10V, f=1MHz
ns
IC=-1A, VCC=-10V
ns
IB1=IB2=-100mA
ISSUE 2 - JULY 2001
4
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