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| ZXTD6717E6 Datasheet, PDF (3/7 Pages) Zetex Semiconductors – COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS | |||
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ZXTD6717E6
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 15
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO 15
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
200
Ratio
300
250
200
75
30
Transition Frequency
fT
10
10
10
16.5 20
40
55
75
100
150
200
205
245
0.93 1.1
0.865 1.1
420
450
390
300
150
75
180
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
IE=100â®A
VCB=10V
VEB=4V
VCES=10V
IC=100mA, IB=10mA*
IC=250mA, IB=10mA*
IC=500mA, IB=10mA*
IC=1A, IB=10mA*
IC=1.5A, IB=20mA*
IC=1.5A, IB=20mA*
IC=1.5A, VCE=2V*
IC=10mA, VCE=2V*
IC=100mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
15
Turn-On Time
Turn-Off Time
t(on)
t(off)
50
250
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=10V, f=1MHz
ns
IC=1A, VCC=10V
ns
IB1=IB2=100mA
ISSUE 2 - JULY 2001
3
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