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| ZXTC2045E6 Datasheet, PDF (3/4 Pages) Zetex Semiconductors – Dual 40V complementary transistors in SOT23-6 | |||
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ZXTC2045E6
Electrical characteristics (at TAMB = 25°C unless otherwise stated)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown BVCBO (-)40(*)
voltage
V IC = (-)100â®A
Collector-emitter
breakdown voltage
BVCEV (-)40(*)
V IC = (-)1â®A
0.25V>VBE>1.0V
( 0.25V<VBE<1.0V )
Collector-emitter
breakdown voltage
BVCEO (-)30(*)
V IC = (-)10mA (â )
Emitter-base breakdown BVEBO (-)7(*) (-)8.5(*)
voltage
V IE = (-)100â®A
Collector cut-off current ICBO
(-)<1(*) (-)20(*) nA VCB = (-)32V
Collector cut-off current ICES/R
(-)<1(*) (-)20(*) nA VCE = (-)16V, RÕ
1kâ¦
Emitter cut-off current
IEBO
(-)<1(*) (-)20(*) nA VEB = (-)6V
Collector-emitter
saturation voltage
VCE(SAT)
(-)375(*) mV IC = (-)0.75A, IB =(-)15mA (â )
Base-emitter saturation VBE(SAT)
voltage
(-)1.2(*) V IC =(-) 0.75A, IB =(-)15mA(â )
Static forward current
hFE
transfer ratio
180 300 500
IC = (-)100mA, VCE =(-)2V(â )
NOTES:
(*) ( ) applies to PNP
(â ) Measured under pulsed conditions. Pulse width Õ
300 s; duty cycle Õ
2%.
Issue 1 - January 2006
3
© Zetex Semiconductors plc 2006
www.zetex.com
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