ZXTC2045E6 Datasheet, PDF (2/4 Pages) Zetex Semiconductors – Dual 40V complementary transistors in SOT23-6

ZXTC2045E6
Absolute maximum ratings (each transistor)
Parameter
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current ^(a)
Base current
Power dissipation at T_A =25°C ^{(a) (c)}
Linear derating factor
Power dissipation at T_A =25°C ^{(a) (d)}
Linear derating factor
Power dissipation at T_A =25°C ^{(b) (c)}
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient ^{(a) (c)}
Junction to ambient ^{(b) (c)}
Junction to ambient ^{(a) (d)}
Symbol
BV_CBO
BV_CEV
BV_CEO
BV_EBO
I_CM
I_C
I_B
P_D
P_D
P_D
T_j, T_stg
Limit
NPN
40
PNP
-40
40
-40
30
-30
7
-7
5
-5
1.5 -1.5
1
-1
0.9
7.2
1.1
8.8
1.7
13.6
-55 to +150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Symbol
R_θJA
R_θJA
R_θJC
Value
139
73
113
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) As above measured at t < 5 seconds.
(c) For device with one active die.
(d) For device with two active dice running at equal power.
Issue 1 - January 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com