ZVP0535A Datasheet, PDF (3/3 Pages) Zetex Semiconductors – P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

TYPICAL CHARACTERISTICS
ZVP0535A
60
50
VDS=-10V
40
30
20
10
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
VGS-Gate Source Voltage (Volts)
Transconductance v gate-source voltage
0
-2
VDS=
ID= -250mA
-4
-100V -200V -350V
-6
-8
-10
-12
-14
-16
0
0.5
1.0 1.5 2.0
2.5 3.0
Q-Charge (nC)
Gate charge v gate-source voltage
1000
100
VGS=-4V
-5V
-6V
-8V
-10V
10
-1
-10
-100
ID-Drain Current (mA)
-1000
On-resistance v Gate-Source Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
Drain-Source
Resistance
R^DS(on)
VGS=-10V
ID=-50mA
VGS=VDS
0.8
Gate
Threshold
Voltage
ID=-1mA
VGS(TH)
0.6
0.4
-40 -20 0 20 40 60 80 100 120 140 160 180
T-Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
3-411