ZVP0535A Datasheet, PDF (1/3 Pages) Zetex Semiconductors – P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt V_DS
* R_DS(on)=100Ω
ZVP0535A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
D
G
S
E-Line
TO92 Compatible
VALUE
-350
-50
-480
± 20
700
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV_DSS -350
V
I_D=-1mA, V_GS=0V
Gate-Source
Threshold Voltage
V_GS(th) -1.5 -4.5 V
ID=-1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
100 nA V_GS=± 20V, V_DS=0V
Zero Gate Voltage
Drain Current
I_DSS
-20 µA V_DS=-350 V, V_GS=0
-2 mA V_DS=-280 V, V_GS=0V,
T=125°C(2)
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
I_D(on)
R_DS(on)
-120
mA V_DS=-25 V, V_GS=-10V
100 Ω
V_GS=-10V,I_D=-50mA
Forward Transconductance g_fs
40
(1)(2)
mS V_DS=-25V,I_D=-50mA
Input Capacitance (2)
C_iss
Common Source Output
C_oss
Capacitance (2)
120 pF
20 pF
V_DS=-25 V, V_GS=0V, f=1MHz
Reverse Transfer Capacitance C_rss
(2)
5 pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t_d(on)
t_r
t_d(off)
t_f
10 ns
15 ns _{VDD≈-25V, ID=-50mA}
15 ns
20 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
3-409
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