ZVN4306A Datasheet, PDF (3/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVN4306A
TYPICAL CHARACTERISTICS
VGS=
20V 12V 10V 9V 8V
12
11
10
9
8
7
6
5
4
3
2
1
0
01 2 3 4 5 6 7 8 9
VDS - Drain Source Voltage (Volts)
7V
6V
5V
4V
3.5V
3V
10
VGS=3V 3.5V
10
5V 6V
1.0
8V
10V
0.1
0.1
1
10
100
ID-Drain Current (Amps)
Saturation Characteristics
On-resistance v drain current
2.6
2.4
VGS=10V
2.2
ID=3A
2.0
1.8
1.6
1.4
1.2
Drain-Source ^{Resistance RDS(on) VGS=VDS}
1.0
ID=1mA
0.8
0.6
Gate Threshold Voltage VGS(TH)
-50 -25 0 25 50 75 100 125 150 175 200 225
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
5
4
3
VDS=10V
2
1
0
0 2 4 6 8 10 12 14 16 18 20
ID(on)- Drain Current (Amps)
Transconductance v drain current
500
400
300
200
Ciss
100
Coss
0
Crss
0 10 20 30 40 50 60 70 80
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
3-392
16
14
ID=3A
12
10
8
6
VDD=
20V
40V
60V
4
2
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Q-Charge (nC)
Gate charge v gate-source voltage