ZVN4306A Datasheet, PDF (2/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVN4306A
ELECTRICAL CHARACTERISTICS
otherwise stated).
(at
T_amb
=
25°C
unless
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Input Capacitance (2) C_iss
350 pF
Common Source
C_oss
Output Capacitance
(2)
140 pF
V_DS=25 V, V_GS=0V, f=1MHz
Reverse Transfer
C_rss
Capacitance (2)
30
pF
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
t_d(on)
t_r
8
ns
25
ns
V_DD≈25V, V_GEN=10V, I_D=3A
Turn-Off Delay Time t_d(off)
(2)(3)
30
ns
Fall Time (2)(3)
t_f
16
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient
Junction to Case
SYMBOL
R_th(j-amb)
R_th(j-case)
MAX.
150
50
UNIT
°C/W
°C/W
1.0
0.75
0.50
0.25
-40 -20 0 20 40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Derating curve
150
D.C.
t1 _D=t1/tP
100
tP
D=0.6
50
D=0.2
D=0.1
D=0.05
0
Single Pulse
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (seconds)
Maximum transient thermal impedance
3-391