ZBNG4000 Datasheet, PDF (3/10 Pages) Zetex Semiconductors – FET BIAS CONTROLLER

ZNBG4000 ZNBG4001
ZNBG6000 ZNBG6001
SYMBOL PARAMETER
CONDITIONS
LIMITS
UNITS
GATE CHARACTERISTICS
Min Typ Max
I_GO
Output Current Range
Output Voltage
ZNBG4000/1
-30
2000 µA
V_OL
Output Low
V_OH
Output High
Output Voltage
ZNBG6000/1
I_D1 to I_D4=12mA
I_G1 to I_G4=0
-3.5
I_D1 to I_D4=12mA
I_G1 to I_G4= -10µA -3.5
I_D1 to I_D4= 8mA
I_G1 to I_G4= 0
0
-2
V
-2
V
1
V
V_OL
Output Low
I_D1 to I_D6=12mA
I_G1 to I_G6= 0
-3.5
I_D1 to I_D6=12mA
I_G1 to I_G6= -10µA -3.5
V_OH
Output High
I_D1 to I_D6= 8mA
I_G1 to I_G6= 0
0
-2
V
-2
V
1
V
Notes:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, CNB and CSUB, of
47nF are required for this purpose.
2. The characteristics are measured using two external reference resistors RCAL1 and RCAL2 of value 33kΩ wired from pins RCAL1/2 to
ground. For the ZNBG4000, resistor RCAL1 sets the drain current of FETs 1 and 2, resistor RCAL2 sets the drain current of FETs 3 and 4.
For the ZNBG6000, resistor RCAL1 sets the drain current of FETs 1 and 4, resistor RCAL2 sets the drain current of FETs 2, 3, 5 and 6.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all
outputs. C_G, 4.7nF, are connected between gate outputs and ground, C_D, 10nF, are connected
between drain outputs and ground.
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