FZT849 Datasheet, PDF (3/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR

FZT849
TYPICAL CHARACTERISTICS
0.8
0.6
0.4
0.2
IC/IB=10
IC/IB=50
0
0.01
0.1
1
10
100
I+ - Collector Current (Amps)
VCE(sat) v IC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
VCE=5V
VCE=1V
300
200
100
0.1
1
10
100
I+ - Collector Current (Amps)
hFE v IC
2.0
1.5
1.0
IC/IB=10
IC/IB=50
0.5
0.001
0.01
0.1
1
10
100
I+ - Collector Current (Amps)
VBE(sat) v IC
100
Single Pulse Test at Tamb=25°C
2.0
VCE=1V
1.5
1.0
0.5
0.001
0.01
0.1
1
10
100
I+ - Collector Current (Amps)
VBE(on) v IC
10
D.C.
1s
100ms
1
10ms
1.0ms
0.1ms
0.1
0.1
1
10
100
V+- - Collector Voltage (Volts)
Safe Operating Area
3 - 259