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| FZT849 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR | |||
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FZT849
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
V(BR)CBO 80
120
Voltage
V
IC=100µA
Collector-Emitter Breakdown V(BR)CER 80
120
Voltage
V
IC=1µA, RB â¤1kâ¦
Collector-Emitter Breakdown V(BR)CEO 30
40
Voltage
V
IC=10mA*
Emitter-Base Breakdown
V(BR)EBO
6
8
Voltage
V
IE=100µA
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICER
R â¤1kâ¦
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
50
nA
VCB=70V
1
µA
VCB=70V, Tamb=100°C
50
nA
VCB=70V
1
µA
VCB=70V, Tamb=100°C
10
nA
VEB=6V
35
50
mV IC=0.5A, IB=20mA*
67
110 mV IC=1A, IB=20mA*
168 215 mV IC=2A, IB=20mA*
350 mV IC=6.5A, IB=300mA*
1.2 V
IC=6.5A, IB=300mA
Base-Emitter Turn-On Voltage VBE(on)
Static Forward
hFE
Current Transfer Ratio
Transition Frequency
fT
1.13 V
IC=6.5A, VCE=1V*
100 200
100 200 300
100 150
30
65
IC=10mA, VCE=1V
IC=1A, VCE=1V*
IC=7A, VCE=1V*
IC=20A, VCE=2V*
100
MHz IC=100mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
75
pF
Switching Times
ton
toff
45
ns
630
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
VCB=10V, f=1MHz*
IC=1A, IB1=100mA
IB2=100mA, VCC=10V
3 - 258
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