BS250F Datasheet, PDF (3/3 Pages) Zetex Semiconductors – P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

BS250F
TYPICAL CHARACTERISTICS
120
100
80
Note:VDS=-10V
60
40
20
0
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
ID- Drain Current (Amps)
Transconductance v drain current
120
100
80
Note:VDS=-10V
60
40
20
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
VGS-Gate Source Voltage (Volts)
Transconductance v gate-source voltage
60
50
Note:VGS=0V
f=1MHz
40
30
Ciss
20
Coss
10
Crss
0
0 -10 -20 -30 -40 -50 -60 -70
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
2
1
Note:ID=- 0.2A
0
-2
-4
VDS=
-6
-20V -40V -60V
-8
-10
-12
-14
-16
0
0.5
1.0
1.5
Q-Gate Charge (nC)
Gate charge v gate-source voltage
3 - 57