BS250F Datasheet, PDF (1/3 Pages) Zetex Semiconductors – P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
BS250F
S
D
G
PARTMARKING DETAIL – MX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
SOT23
VALUE
-45
-90
-1.6
± 20
330
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV_DSS -45 -70
V
I_D=-100µA, V_GS=0V
Gate-Source Threshold
Voltage
V_GS(th) -1
-3.5 V
I_D=-1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
Zero Gate Voltage Drain
I_DSS
Current
-20 nA
-0.5. µA
V_GS=-15V, V_DS=0V
V_DS=-25V, V_GS=0V
Static Drain-Source On-State R_DS(on)
Resistance (1)
9
14 Ω
V_GS=-10V,I_D=-200mA
Forward Transconductance g_fs
(1)(2)
90
mS V_DS=-10V,I_D=-200mA
Input Capacitance (2)
C_iss
25
pF V_DS=-10V, V_GS=0V,
f=1MHz
Turn-On Delay Time (2)(3)
t_d(on)
10 ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
t_r
t_d(off)
10 ns _{VDD≈-25V, ID=-200mA}
10 ns
Fall Time (2)(3)
t_f
10 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
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