ZHCS1006 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT”

ZHCS1 0 0 6
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
10
1
100m
10m
1m
0
+125°C
+25°C
-55°C
0.1 0.2 0.3 0.4 0.5 0.6
VF - Forward Voltage (V)
IF v VF
1
100m
10m
+125°C
1m
100u
+100°C
+50°C
10u
1u
+25°C
100n
10n
-55°C
1n
0
20
40
60
VR - Reverse Voltage (V)
IR v VR
0.8
Typical
0.6 ^Tj=125°C
DC
D=0.5
D=0.2
0.4
D=0.1
D=0.05
0.2
t
1 _{D=t 1/t p}
I F(pk)
t
p
I F(av) =DxI F(pk)
PF(av) =I F(av) xV F
0
75
85
95
105
115
125
TC - Case Temperature (°C)
IF(av) v TC
0.6
0.4
0.2
0
0
Typical
Tj=125°C
t
1 _{D=t 1/t p}
I F(pk)
DC
D=0.5
D=0.2
D=0.1
D=0.05
t
p
I F(av) =DxI F(pk)
PF(av) =I F(av) xV F
0.4
0.8
1.2
IF(av) - Avg Fwd Curr (A)
PF(av) v IF(av)
125
140
100
Rth=100°C/W
Rth=200°C/W
Rth=300°C/W
75
1
10
100
VR - Reverse Voltage (V)
Ta v VR
70
0
0
20
40
60
VR - Reverse Voltage (V)
CD v VR