ZHCS1006 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT”

SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”
ISSUE 1 - NOVEMBER 1997 7
FEATURES:
• High current capability
1
• Low V_F
APPLICATIONS:
• Mobile telecomms, PCMIA & SCSI
• DC-DC Conversion
PARTMARKING DETAILS : S16
3
ABSOLUTE MAXIMUM RATINGS.
ZHCS1 0 0 6
C
2
1
A
3
SOT2 3
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V_R
Forward Current
I_F
Forward Voltage @ I_F = 1000mA(typ)
V_F
Average Peak Forward Current;D.C.= 50%
I_FAV
Non Repetitive Forward Current t≤100µs
I_FSM
t≤1 0 ms
Power Dissipation at T_amb= 25° C
P_tot
Storage Temperature Range
T_stg
Junction Temperature
T_j
60
V
900
mA
600
mV
1600
mA
12
A
5
A
500
mW
-55 to + 150
°C
125
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25° C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V _(BR)R
60
80
V
I_R= 300µA
Forward Voltage
V_F
Reverse Current
I_R
245 280 mV
275 320 mV
330 390 mV
395 470 mV
455 530 mV
510 600 mV
620 740 mV
50
100 _µA
I_F= 50mA*
I_F= 100mA*
I_F= 250mA*
I_F= 500mA*
I_F= 750mA*
I_F= 1000mA*
I_F= 1500mA*
V_R= 45V
Diode Capacitance
C_D
17
pF
f= 1MHz,V_R= 25V
Reverse Recovery
t_rr
Time
12
ns
switched from
I_F = 500mA to I_R =
500mA
Measured at I_R = 50mA
*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle ≤2%