FMMT497 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR

FMMT497
TYPICAL CHARACTERISTICS
0.6
+25 ° C
0.5
0.4
I+/I*=10
I+/I*=50
0.3
0.2
0.1
0
1mA
10mA
100mA
1A
IC-Collector Current
VCE(sat) v IC
0.6
I+/I*=10
0.5
0.4
0.3
-55 °C
+25 °C
+100 °C
0.2
0.1
0
1mA
10mA
100mA
1A
IC-Collector Current
VCE(sat) v IC
400 _V+-=10V
+100 °C
300
+25 °C
200
-55 °C
100
0
1mA
10mA
100mA
1A
IC-Collector Current
hFE V IC
0.9 ^I+/I*=10
0.8
0.6
0.4
-55 °C
+25 °C
+100 °C
0.2
0
1mA
10mA
100mA
1A
IC-Collector Current
VBE(sat) v IC
0.9 ^V+-=10V
0.8
0.6
0.4
-55 °C
+25 °C
+100 °C
0.2
0
1mA
10mA
100mA
1A
IC-Collector Current
VBE(on) v IC
1
0.1
0.01
DC
1s
100ms
10ms
1ms
100µs
0.001
0.1
1
10
100
1000
VCE - Collector Emitter Voltage (V)
Safe Operating Area
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