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| FMMT497 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR HIGH VOLTAGE
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 Â DECEMBER 1995 7
COMPLIMENTARY TYPE Â FMMT597
PARTMARKING DETAIL Â 497
FMMT497
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
300
V
300
V
5
V
500
mA
1
A
200
mA
500
mW
-55 to +150
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 300
V
IC=100µA
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
VCEO(sus) 300
V
V(BR)EBO
5
V
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
100
nA
100
nA
100
nA
0.2
V
0.3
V
1.0
V
VBE(on)
1.0
V
IC=10mA*
IE=100µA
VCB=250V
VCES=250V
VEB=4V
IC=100mA, IB=10mA
IC=250mA, IB=25mA
IC=250mA, IB=25mA
IC=250mA, VCE=10V
Static Forward Current
Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
hFE
fT
Cobo
100
80
300
20
IC=1mA, VCE=10V
IC=100mA, VCE=10V*
IC=250mA, VCE=10V*
75
MHz
IC=50mA, VCE=10V
f=100MHz
5
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3 - 125
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