AO3407-SOT23-3L Datasheet, PDF (4/5 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – P-Channel Enhancement MOSFET

AO3407
■ Typical Characterisitics
10
V _DS =-15V
8
I_D =-4A
6
4
2
0
0
4
8
12
16
-Q_g (nC)
Figure 7: Gate-Charge Characteristics
100
T _J(Max)=150°C
T _A =25°C
R _DS(ON)
10 _limited
100 µs _{10 µs}
1ms
0.1s _10ms
1
1s
10s
DC
0.1
0.1
1
10
100
-V_DS (Volts)
.
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1000
800
C _iss
600
400
C _oss
200
C _rss
0
0
5
10
15
20
25
30
-V_DS (Volts)
Figure 8: Capacitance Characteristics
40
T _J(Max)=150°C
T _A =25°C
30
20
10
0
0.001 0.01 0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T _on/T
T _J,PK =T _A+P _DM .Z_θJA .R_θJA
R _θJA =90°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
P_D
0.1
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
T _on
T
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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