AO3407-SOT23-3L Datasheet, PDF (1/5 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – P-Channel Enhancement MOSFET

AO3407
P-Channel Enhancement MOSFET
Features
VDS (V) = -30V
ID = -4.1 A
RDS(ON) 52m
RDS(ON) 87m
(VGS = -10V)
(VGS = -4.5V)
Marking
Marking
A7**
3
2
1. Gate
1
2. Source
3. Drain
■ Simplified outline(SOT23-3L)
D
G
S
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t ≤10s
Steady State
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJL
TJ
Tstg
Rating
-30
±20
-4.1
-3.5
-20
1.4
1
90
125
60
150
-55 to 150
Unit
V
A
W
℃/W
℃
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