MUN5111 Datasheet, PDF (6/12 Pages) Weitron Technology – Bias Resistor Transistor PNP Silicon

10
I_C/I_B = 10
DEVICE CHARACTERISTICS
MUN511 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5112
1000
V_CE = 10 V
1
25°C
T_AĂ=Ă-25°C
100
75°C
ā0.1
T_AĂ=Ă75°C
25°C
-25°C
0.01
0
ā20
ā40
I_C, COLLECTOR CURRENT (mA)
Figure 7. V_CE(sat) versus I_C
10
ā50
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
4
100
f = 1 MHz
75°C ^25°C
3
l_E = 0 V
T_A = 25°C
10
T_AĂ=Ă-25°C
1
2
ā0.1
1
ā0.01
V_O = 5 V
0
0
10
20
30
40
50
ā0.001 _{0 1 ā2 ā3 ā4 ā5 ā6 ā7 ā8 ā9 10}
V_R, REVERSE BIAS VOLTAGE (VOLTS)
V_in, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
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100
V_O = 0.2 V
T_AĂ=Ă-25°C
10
25°C
75°C
1
ā0.1 ₀
10
ā20
ā30
ā40
ā50
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
6
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