RB751G-40 Datasheet, PDF (3/4 Pages) List of Unclassifed Manufacturers – Schottky barrier Diodes

DEVICE CHARACTERISTICS
RB751G-40
Electricalcharacteristiccurves(Ta=25^OC)
10
8
Ifsm
t
6
4
2
0
0.1
1 _TIME:t(ms) 10
100
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=1mA
IF=10mA
10
0.001
1ms ^time
300us
0.1 _TIME:t(s) 10
Rth-t CHARACTERISTICS
1000
0.05
0.04
DC
0.03
D=1/2
Sin(θ＝180)
0.02
0.01
0
0 0.01 0.02 0.03 0.04 0.05
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.003
0.002
0.001
D=1/2
DC
Sin(θ＝180)
0
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
0.1
0.08
0.06
DC
0.04 _D=1/2
0A
Io
0V
VR
t
D=t/T
VR=20V
T Tj=125℃
0.02
Sin(θ＝180)
0
0
25 50 75 100 125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
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0.1
0.08
0.06 _DC
0A
Io
0V
t
VR
D=t/T
VR=20V
T Tj=125℃
0.04 D=1/2
0.02
Sin(θ＝180)
0
0
25
50
75 100 125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
3
REV.02 20120403