RB751G-40 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – Schottky barrier Diodes

DEVICE CHARACTERISTICS
RB751G-40
Electricalcharacteristiccurves(Ta=25^OC)
100
10
Ta=75℃
Ta=125℃
1
0.1
Ta=25℃
Ta=-25℃
0.01
0.001
0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100000
Ta=125℃
10000
1000
100
10
Ta=75℃
Ta=25℃
Ta=-25℃
1
0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
f=1MHz
1
0.1
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
330
1000
Ta=25℃
900
Ta=25℃
VR=30V
320
IF=1mA
800
n=30pcs
n=30pcs
700
310
600
500
300
290
AVE:304.2mV
400
300
AVE:111.0nA
200
100
280
0
VF DISPERSION MAP
IR DISPERSION MAP
10
9
Ta=25℃
f=1MHz
8
VR=0V
7
n=10pcs
6
5
4
3
AVE:1.81pF
2
1
0
Ct DISPERSION MAP
20
30
Ifsm
1cyc
25
15
8.3ms
20
10
Ta=25℃
IF=0.5A
IR=1A
8
Irr=0.25*IR
n=10pcs
6
Ifsm
8.3ms 8.3ms
1cyc
10
15
4
AVE:3.40A
10
5
2
5
AVE:11.7ns
0
IFSM DISRESION MAP
0
trr DISPERSION MAP
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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2
REV.02 20120403