RB521G-30 Datasheet, PDF (2/3 Pages) Rohm – Schottky barrier diode

DEVICE CHARACTERISTICS
RB521G-30
Electrical characteristic curves (Ta=25°C)
1000
100 ^Ta=125℃
Ta=75℃
10
1
0.1
Ta=-25℃
Ta=25℃
10000
1000
100
10
1
0.01
0.1
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
100
Ta=125℃
Ta=75℃
Ta=25℃
10
Ta=-25℃
f=1MHｚ
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
300
Ta=25℃
IF=10mA
290
n=30pcs
280
270
260
AVE:270.2mV
250
VF DISPERSION MAP
30
20
Ta=25℃
19
25
VR=10V
n=30pcs
18
17
20
16
Ta=25℃
f=1MHz
VR=0V
n=10pcs
15
15
14
10
13
AVE:2.017uA
5
12
AVE:17.34pF
11
0
10
IR DISPERSION MAP
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
AVE:3.90A
5
0
IFSM DISRESION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
100
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
IM=10mA
IF=100mA
0.1
0.08
D=1/2
0.06
Sin(θ＝180)
0.04
0.1
0.08
DC
0.06
0.04
D=1/2
DC
0.02
1ms time
0.02 Sin(θ＝180)
10
0.001
300us
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
0.1
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
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