RB521G-30 Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

DATA SHEET
SEMICONDUCTOR
Schottky barrier diode
zApplication
Rectifying small power
zFeatures
1) Ultra small mold type.
2) Low VF
3) High reliability
zConstruction
Silicon epitaxial planer
z We declare that the material of product
compliance with RoHS requirements.
z We declare that the material of product
is Halogen Free (Green Epoxy Compound).
RB521G-30
H
SOD– 723
1
CATHODE
2
ANODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
V_R
30
V
Average rectified forward current
Io
100
mA
Forward current surge peak （60Hz・1cyc）
I_FSM
500
mA
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol M n. Typ. Max.
Forward voltage
V_F
-
- 0.35
Reverse current
I_R
-
-
10
zO rdering nI formation
Device
RB521G-30
Marking
F
Marking Information
Shipping
3000/Tape & Reel
Unit
Conditions
V
I_F=10mA
µA
V_R=10V
F
^ _{CA T H O DE B A N D}
F --- Device Code
M --- Date Code
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REV.02 20120305