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| RB520G-30 Datasheet, PDF (2/3 Pages) Rohm – Schottky barrier diode | |||
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DEVICE CHARACTERISTICS
RB520G-30
Electrical characteristic curves (Ta=25°C)
1000
100
Ta=125â
Ta=75â
10
1000000
100000
10000
1
Ta=-25â
1000
0.1
Ta=25â
100
0.01
10
0.001
1
0 100 200 300 400 500 600
0
FORWARD VOLTAGEï¼VF(mV)
VF-IF CHARACTERISTICS
Ta=125â
Ta=75â
Ta=25â
Ta=-25â
10
20
30
REVERSE VOLTAGEï¼VR(V)
VR-IR CHARACTERISTICS
100
f=1MHï½
10
1
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
370
1000
20
360
Ta=25â
IF=10mA
900
n=30pcs
800
Ta=25â
19
VR=10V
n=30pcs
18
700
17
350
600
16
500
15
340
400
14
300
AVE:100.5nA
13
330
200
12
AVE:338.8mV
100
11
320
0
10
Ta=25â
f=1MHz
VR=0V
n=10pcs
AVE:15.94pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
AVE:3.90A
5
0
IFSM DISRESION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
0
1
10
100
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=10mA
IF=100mA
10
0.001
1m time
300u
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0.1
0.08
DC
D=1/2
0.06
Sin(θï¼180)
0.04
0.02
0
0
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENTï¼Io(A)
Io-Pf CHARACTERISTICS
0.02
0.015
0.01
0.005
D=1/2
DC
Sin(θï¼180)
0
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
http://www.yeashin.com
2
REV.02 20120305
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