RB520G-30 Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

DATA SHEET
SEMICONDUCTOR
Schottky barrier diode
P b - free pack age is available
RB520G-30
H
zApplications
Low current rectification
zFeatures
1) Ultra Small mold type.
2) Low I_R.
3) High reliability.
SOD– 723
zConstruction
Silicon epitaxial planar
1
CATHODE
2
ANODE
zD evice M ark ing
Device
RB520G-30
RB520G-30
Marking
E
E
Shipping
3000/Tape&Reel
10000/Tape&Reel
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage(DC)
V_R
30
V
Average rectified forward current
Io
100
mA
Forward current surge peak （60Hz・1cyc） I_FSM
500
mA
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
zElectrical characteristics (Ta=25°C)
Param eter
Sym bol Min.
Forward voltage
Revers e current
V_F
-
I_R
-
Typ. Max.
-
0.45
-
0.5
Unit
C o n d i tio n s
V
I_F=10m A
µA
V_R=10V
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1
REV.02 20120305