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| BAS70 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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DEVICE CHARACTERISTICS
BAS70/A/C/S
2.5
2.0
f=1.0MHz
1.5
1.0
0.5
0
0
10
20
30
40
REVERSE VOLTAGE: VR(V) f=1MHz Tamb=25OC
Fig.3 Typical Capacitance.
240
200
160
120
80
40
0 25 50 75 100 125 150 175
TA ,Ambient Temperature , O C
Fig.4- Power Derating Curve,Total Package
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