BAS70 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Schottky barrier double diodes

SEMICONDUCTOR
SCHOTTKY DIODE
DATA SHEET
BAS70/A/C/S
H
FEATURES
Low Turn-on voltage
Fast switching
Ultra-small surface mount package
Also available in lead free version
SOT23 Unit:inch(mm)
High temperature soldering : 260^OC / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
6°
BAS70 Marking: 73
BAS70S Marking: 74
MAXIMUM RATINGS* TA=25 unless otherwise noted
BAS70C Marking: 75
BAS70A Marking: 76
Symbol
Parameter
VR
IF
Pd
TJ, Tstg
DC Voltage
Forward Continuous Current
Power dissipation
Junction Operating and Storage Temperature
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
V(BR) R
IR
VF
CD
trr
Test conditions
IR= 10µA
VR=50V
IF=1mA
IF=15mA
VR=0V f=1MHz
IF=IR=10mA,Irr=0.1xIR,
RL=100
Value
70
70
200
-55~+150
MIN
MAX
70
100
410
1000
2
5
Units
V
mA
mW
UNIT
V
nA
mV
pF
nS
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REV.03 20120305