9012P Datasheet, PDF (2/2 Pages) Yea Shin Technology Co., Ltd – General Purpose Transistors

PACKAGE OUTLINE & DIMENSIONS
9012P-Q-R-S
ON CHARACTERISTICS
DC Current Gain
(IC=50mA, VCE=1V)
Collector-Emitter Saturation Voltage
(IC=500mA,IB=50mA)
Hfe
100
-
600
VCE(S)
-
-
0.6
V
NOTE:
*
HFE
P
Q
R
S
100~200 150~300 200~400 300~600
SOT-23 (TO-236AB)
A
L
3
BS
1
2
V
G
C
D
H
K
J
0.037
0.95
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH
SOLDER PLATING.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0180 0.0236
L 0.0350 0.0401
S 0.0830 0.0984
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.45 0.60
0.89 1.02
2.10 2.50
0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
http://www.yeashin.com
2
REV.02 20120705