9012P Datasheet, PDF (1/2 Pages) Yea Shin Technology Co., Ltd – General Purpose Transistors

DATA SHEET
SEMICONDUCTOR
General Purpose Transistors
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device
Package
9012X
SOT-23
Shipping
3000/Tape&Reel
9012P-Q-R-S
H
SOT-23 (TO-236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V_CEO
20
V
Collector-Base Voltage
V_CBO
40
V
Emitter-Base Voltage
V_EBO
5
V
3
COLLECTOR
Collector current-continuoun
IC
500
mAdc
THERMAL CHARATEERISTICS
1
BASE
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,
T_A=25^oC
Derate above 25^oC
P_D
225
mW
1.8
mW/^oC
2
EMITTER
Thermal Resistance, Junction to Ambient
R _{θ JA}
556
o_C/W
Total Device Dissipation
Alumina Substrate, TA=25 ^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
P_D
R _θJA
Tj ,Tstg
300
2.4
417
-55 to +150
mW
mW/^oC
o_C/W
o_C
9012P=12P
9012Q=12Q 9012R=12R
9012S=12S
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100 µ A)
Collector-Base Breakdown Voltage
(IC=100 µ A)
Collector Cutoff Current (VCB=35V)
V(BR)CEO
20
V(BR)EBO
5
V(BR)CBO
40
ICBO
-
-
-
V
-
-
V
-
-
V
-
150
nA
Emitter Cutoff Current (VBE=4V)
IEBO
150
nA
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1
REV.02 20120705