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UG2502W Datasheet, PDF (2/4 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – Dual N-Ch 20V Fast Switching MOSFETs
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UG2502W
Dual N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25℃ , ID=1mA
VGS=4.5V , ID=5A
VGS=2.5V , ID=4A
VGS=VDS , ID =250uA
VDS=16V , VGS=0V , TJ=25℃
VDS=16V , VGS=0V , TJ=55℃
VGS=±12V , VDS=0V
VDS=5V , ID=5A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=5A
VDD=10V , VGS=4.5V , RG=3.3Ω
ID=5A
VDS=15V , VGS=0V , f=1MHz
Min.
20
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0.5
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---
---
---
---
---
---
---
---
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---
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Typ.
---
0.024
17
21
0.8
-3.58
---
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25.4
1.5
11.3
1.59
2.86
5
53.4
27
8.8
865
86
72
Max.
---
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22
28
1.2
---
1
5
±100
---
3
15.8
2.2
4.0
10.0
96
54
17.6
1211
120
101
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=5A , dI/dt=100A/µs , TJ=25℃
Min.
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Typ.
---
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8.3
2.4
Max.
5.8
24
1.2
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Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
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