UG2502W Datasheet, PDF (1/4 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – Dual N-Ch 20V Fast Switching MOSFETs

UG2502W
Dual N-Ch 20V Fast Switching MOSFETs
General Description
The UG2502W is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The UG2502W meet the RoHS and Green
Product requirement with full function reliability
approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
20V
RDS(ON)
22mΩ
ID
5.8A
Applications
z Power management in portable and battery
operated products
z DC-DC Power System
z Load Switch
TSSOP8 Pin Configuration
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 4.5V¹
Continuous Drain Current, V_GS @ 4.5V¹
Pulsed Drain Current²
Total Power Dissipation³
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
R_θJA
R_θJC
Parameter
Thermal Resistance Junction-ambient ¹
Thermal Resistance Junction-Case¹
Rating
20
±12
5.8
4.6
24
1.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Typ.
---
---
Max.
110
70
Unit
℃/W
℃/W
1