DS635 Datasheet, PDF (9/37 Pages) Xilinx, Inc – Enhanced Double Data Rate (DDR) support

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Table 7: General DC Characteristics of User I/O, Dual-Purpose, and Dedicated Pins (Continued)
Symbol
Description
Test Conditions
Min Typ
I_RPD(2)
Current through pull-down resistor at
User I/O, Dual-Purpose, Input-only,
and Dedicated pins
V_IN = V_CCO
0.10 –
R_PD(2)
Equivalent pull-down resistor value at
User I/O, Dual-Purpose, Input-only,
and Dedicated pins (based on I_RPD
per Note 2)
V_IN = V_CCO = 3.0V to 3.45V
V_IN = V_CCO = 2.3V to 2.7V
V_IN = V_CCO = 1.7V to 1.9V
4.0 –
3.0 –
2.3 –
V_IN = V_CCO = 1.4V to 1.6V
1.8 –
V_IN = V_CCO = 1.14V to 1.26V
1.5 –
I_REF V_REF current per pin
All V_CCO levels
–10 –
C_IN Input capacitance
R_DT Resistance of optional differential
termination circuit within a differential
I/O pair. Not available on Input-only
pairs.
-
V_OCM Min ≤ V_ICM ≤ V_OCM Max
V_OD Min ≤ V_ID ≤ V_OD Max
V_CCO = 2.5V
–
–
– 120
Max Units
0.75 mA
34.5 kΩ
27.0 kΩ
19.0 kΩ
16.0 kΩ
12.6 kΩ
+10 μA
10 pF
–
Ω
Notes:
1. The numbers in this table are based on the conditions set forth in Table 6.
2. This parameter is based on characterization. The pull-up resistance R_PU = V_CCO / I_RPU. The pull-down resistance R_PD = V_IN / I_RPD.
Table 8: Quiescent Supply Current Characteristics
Symbol
Description
I_CCINTQ Quiescent V_CCINT
supply current
I_CCOQ
Quiescent V_CCO
supply current
Device
XA3S100E
XA3S250E
XA3S500E
XA3S1200E
XA3S1600E
XA3S100E
XA3S250E
XA3S500E
XA3S1200E
XA3S1600E
I-Grade Maximum
36
104
145
324
457
1.5
1.5
1.5
2.5
2.5
Q-Grade
Maximum
58
158
300
500
750
2.0
3.0
3.0
4.0
4.0
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
DS635 (v2.0) September 9, 2009
www.xilinx.com
Product Specification
9